Asen Asenov

Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

Asen Asenov, Savaş Kaya, A. R. Brown · IEEE Transactions on Electron Devices · 2003 · 583 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Electron Devices · 2003 · 543 citations

Device Modeling, Quantum Science, Electrical Engineering +12

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Christoph Busche, Laia Vilà‐Nadal, Jun Yan et al. · Nature · 2014 · 345 citations

Materials Science, Engineering, Nanomaterials +12

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Gareth Roy, A. R. Brown, Fikru Adamu-Lema et al. · IEEE Transactions on Electron Devices · 2006 · 278 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +15

Statistical variability and reliability in nanoscale FinFETs

Xingsheng Wang, A. R. Brown, B. Cheng et al. · 2011 · 271 citations

Device Modeling, Electrical Engineering, Low Channel Doping +15