Gareth Roy

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Gareth Roy, A. R. Brown, Fikru Adamu-Lema et al. · IEEE Transactions on Electron Devices · 2006 · 278 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +15

Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

Andrew R. Brown, Gareth Roy, A. Asenov · IEEE Transactions on Electron Devices · 2007 · 136 citations

Device Modeling, Conventional Architecture, Electrical Engineering +10

Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

Xingsheng Wang, Andrew R. Brown, Niza Mohd Idris et al. · IEEE Transactions on Electron Devices · 2011 · 134 citations

Device Modeling, Electrical Engineering, Engineering +10

Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “<i>Ab Initio</i>” Ionized Impurity Scattering

Craig Alexander, Gareth Roy, A. Asenov · IEEE Transactions on Electron Devices · 2008 · 70 citations

Engineering, Stochastic Analysis, Drain Current Variability +19

Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

Campbell Millar, D. Reid, Gareth Roy et al. · IEEE Electron Device Letters · 2008 · 70 citations

Device Modeling, Hardware Security, Electrical Engineering +14