A. Asenov

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

A. Asenov · IEEE Transactions on Electron Devices · 1998 · 636 citations

Engineering, Computer Engineering, Electrical Engineering +17

Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

Andrew R. Brown, Gareth Roy, A. Asenov · IEEE Transactions on Electron Devices · 2007 · 136 citations

Engineering, Computer Engineering, Electrical Engineering +17

Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

Xingsheng Wang, Andrew R. Brown, Niza Mohd Idris et al. · IEEE Transactions on Electron Devices · 2011 · 134 citations

Engineering, Computer Engineering, Electrical Engineering +17

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

A. R. Brown, A. Asenov, J.R. Watling · IEEE Transactions on Nanotechnology · 2002 · 102 citations

Engineering, Electrical Engineering, Physics +17

Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

B. Cheng, S. Roy, G. Roy et al. · Solid-State Electronics · 2005 · 90 citations

Engineering, Computer Engineering, Electrical Engineering +16