J.R. Watling

Si/SiGe heterostructure parameters for device simulations

Lianfeng Yang, J.R. Watling, R.C.W. Wilkins et al. · Semiconductor Science and Technology · 2004 · 162 citations

Engineering, Materials Engineering, Materials Science +17

Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study

A. R. Brown, Niza Mohd Idris, J.R. Watling et al. · IEEE Electron Device Letters · 2010 · 107 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

A. R. Brown, A. Asenov, J.R. Watling · IEEE Transactions on Nanotechnology · 2002 · 102 citations

Engineering, Electrical Engineering, Physics +17

The thermoelectric properties of Ge/SiGe modulation doped superlattices

Antonio Samarelli, L. Ferre Llin, Stefano Cecchi et al. · Journal of Applied Physics · 2013 · 76 citations

Natural Sciences, Materials Science, Physics +17

A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system

J.R. Watling, Douglas J. Paul · Journal of Applied Physics · 2011 · 53 citations

Engineering, Materials Science, Physics +17