Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

The impact of intrinsic device fluctuations on CMOS SRAM cell stability

A.J. Bhavnagarwala, Xinghai Tang, J.D. Meindl · IEEE Journal of Solid-State Circuits · 2001 · 685 citations

Engineering, Computer Engineering, Electrical Engineering +17

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Electron Devices · 2003 · 549 citations

Engineering, Electrical Engineering, Physics +17

A study of the threshold voltage variation for ultra-small bulk and SOI CMOS

Kiyoshi Takeuchi, Risho Koh, Tohru Mogami · IEEE Transactions on Electron Devices · 2001 · 82 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

S. Inaba, K. Okano, Shôichi Matsuda et al. · IEEE Transactions on Electron Devices · 2002 · 75 citations

Engineering, Electrical Engineering, Microelectronics +16

Direct sampling methodology for statistical analysis of scaled CMOS technologies

Michael Orshansky, J.C. Chen, Chenming Hu · IEEE Transactions on Semiconductor Manufacturing · 1999 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +16