IEEE Electron Device Letters · 2008 · 70 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesStochastic ModelingDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationMonte Carlo SimulationSemiconductor ReliabilityDevice VariabilityDopant DistributionGaussian DistributionsMosfet ModelingRandom Dopant FluctuationSemiconductor Doping ProfilesThreshold VoltageThreshold Voltage Modeling
We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET in the presence of random discrete dopants. A ground-breaking sample of 100 000 transistors with statistically unique random dopant distributions were simulated using the Glasgow 3-D device simulator and advanced grid computing technologies. The results indicate that the threshold voltage distribution deviates substantially from a Gaussian distribution, which may have significant implications for the margins used in circuit design, particularly in SRAM cells.
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High Performance CMOS Variability in the 65nm Regime and Beyond
Sani Nassif, Kerry Bernstein, D.J. Frank et al. · 2007 · 132 citations
Engineering, Electrical Engineering, Materials Engineering +17