Concepedia

Threshold Voltage

Threshold Voltage is the minimum gate-to-source voltage required to establish a conducting channel between the source and drain terminals in a Metal-Oxide-Semiconductor Field-Effect Transistor, marking the onset of strong inversion at the semiconductor-insulator interface.

9.8K

Publications

453.6K

Citations

29.3K

Authors

2.9K

Institutions

Publications per year

2017–2026

2.2K

Variants

Vth

Parents

Publications

9.8K

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Kaushik Roy, Subhas Chandra Mukhopadhyay, Hamid Mahmoodi · Proceedings of the IEEE · 2003 · 2.3K citations

, , +17

Double-Gate Tunnel FET With High- Gate Dielectric

Kathy Boucart, Adrian Ionescu · IEEE Transactions on Electron Devices · 2007 · 1.7K citations · Full text

, , +15

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations

, , +13

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Nano Letters · 2014 · 1.5K citations · Full text

, , +17

Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps

Murray A. Lampert · Physical Review · 1956 · 1.3K citations

, , +17

1–5 of 9.8K

Authors

29.3K

  1. JJ
    Jin Jang

    Kyung Hee University, South Korea

    84 publications · 3.9K citations

    38

    h-index

  2. KJ
    Kevin J. Chen

    Hong Kong University of Science and Technology, Hong Kong SAR China

    69 publications · 4.6K citations

    34

    h-index

  3. JK
    Jae Kyeong Jeong

    Hanyang University, South Korea

    45 publications · 4.6K citations

    33

    h-index

  4. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    46 publications · 6.1K citations

    29

    h-index

  5. JP
    Jin‐Seong Park

    Hanyang University, South Korea

    32 publications · 3.5K citations

    27

    h-index

1–5 of 29.3K

Institutions

2.9K

  1. Samsung (South Korea)

    Seoul, South Korea

    58 h-index

    1.2K publications

    73.8K citations

  2. IBM (United States)

    Armonk, United States

    52 h-index

    616 publications

    33.8K citations

  3. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    51 h-index

    979 publications

    33.7K citations

  4. Yonsei University

    Seoul, South Korea

    49 h-index

    635 publications

    31.2K citations

  5. Purdue University West Lafayette

    West Lafayette, United States

    48 h-index

    370 publications

    36.6K citations

  6. Chinese Academy of Sciences

    Beijing, China

    48 h-index

    996 publications

    44K citations

  7. University of California, Berkeley

    Berkeley, United States

    47 h-index

    396 publications

    38.6K citations

  8. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    47 h-index

    412 publications

    40.8K citations

1–8 of 2.9K

Venues

  1. Applied Physics Letters

    928 publications · 57.1K citations

    117

    h-index

  2. IEEE Transactions on Electron Devices

    1.1K publications · 66.9K citations

    116

    h-index

  3. IEEE Electron Device Letters

    746 publications · 37.8K citations

    91

    h-index

  4. Journal of Applied Physics

    342 publications · 17.4K citations

    66

    h-index

  5. IEEE Journal of Solid-State Circuits

    146 publications · 14.4K citations

    61

    h-index

1–5