Adrian Ionescu - Concepedia

Author

Adrian Ionescu

Also Known As

A Ionescu, A. Ionescu, A. M. Ionescu, A.M. Ionescu, Adrian Ionescu, Adrian M Ionescu, Adrian M. Ionescu, Adrian Mihai Ionescu, Ionescu, Adrian, Ionescu, Mihai Adrian

110

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge École Polytechnique Fédérale de Lausanne University of Oxford Imperial College London Tokyo Institute of Technology

About

Adrian Ionescu is an author at University of Cambridge specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	799
2	Applied Physics	15	17	730
3	Natural Sciences	10	10	320
4	Medicine	2	2	33
5	Biomedical Engineering	2	2	33

Adrian Ionescu

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Double-Gate Tunnel FET With High- Gate Dielectric Kathy Boucart, Adrian Ionescu IEEE Transactions on Electron Devices	2007	1.6K
Characterization of Ni thin films following thermal oxidation in air L. De Los Santos Valladares, Adrian Ionescu, S. N. Holmes, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Magnetic PropertiesEngineeringOxidation ResistanceThermal OxidationMagnetic Materials	2014	109
Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, IEEE Transactions on Electron Devices Device ModelingLow-power ElectronicsElectrical EngineeringNc TransistorsEngineering	2016	96
Long spin diffusion lengths in doped conjugated polymers due to enhanced exchange coupling Shu‐Jen Wang, Deepak Venkateshvaran, M. R. Mahani, Nature Electronics SpintronicsEnhanced Exchange CouplingEngineeringPhysicsPolymer Science	2019	91
Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric Ali Saeidi, Arnab Biswas, Adrian Ionescu Solid-State Electronics Non-volatile MemoryElectrical EngineeringEngineeringSilicon-doped Hafnium OxideApplied Physics	2016	64
RF MEMS Shunt Capacitive Switches Using AlN Compared to $\hbox{Si}_{3}\hbox{N}_{4}$ Dielectric Montserrat Fernández-Bolaños Badía, Elizabeth Buitrago, Adrian Ionescu Journal of Microelectromechanical Systems Electrical EngineeringAluminum NitrideEngineeringRf SemiconductorNanoelectronics	2012	53
Core/shell magnetism in NiO nanoparticles J. F. K. Cooper, Adrian Ionescu, R. M. Langford, Journal of Applied Physics NanoparticlesNeutron DiffractionEngineeringMagnetic ResonanceFerrofluid	2013	51
Crystallization and surface morphology of Au/SiO2 thin films following furnace and flame annealing L. De Los Santos Valladares, Dongwook Lee, Jiwon Seo, Surface Science Materials ScienceMaterials EngineeringEngineeringNanotechnologyCrystal Growth Technology	2009	50
Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Nanotechnology	2018	47
Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor J. L. Padilla, Cem Alper, F. Gámiz, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringSemiconductor DeviceSemiconductors	2014	43

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