Arnab Biswas

TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

Arnab Biswas, Surya Shankar Dan, C. Le Royer et al. · Microelectronic Engineering · 2012 · 140 citations · Full text

Device Modeling, Electrical Engineering, Engineering +10

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Ali Saeidi, Arnab Biswas, Adrian Ionescu · Solid-State Electronics · 2016 · 64 citations · Full text

Non-volatile Memory, Electrical Engineering, Engineering +6

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Wolfgang A. Vitale, Emanuele Andrea Casu, Arnab Biswas et al. · Scientific Reports · 2017 · 62 citations · Full text

Investigation of tunnel field-effect transistors as a capacitor-less memory cell

Arnab Biswas, Nilay Daǧtekın, Antonios Bazigos et al. · Applied Physics Letters · 2014 · 45 citations · Full text

Experimental Results, Electrical Engineering, Non-volatile Memory +8

1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design

Arnab Biswas, Adrian M. Ionescu · IEEE Journal of the Electron Devices Society · 2014 · 43 citations · Full text

Semiconductors, Non-volatile Memory, Electrical Engineering +14