Concepedia

Author

Arnab Biswas

École Polytechnique Fédérale de LausanneORCID

Also Known As

A. Biswas, Ajoy Biswas, Arnab Biswas, Biswas, Ajoy, Biswas, Arnab

27

Publications

493

Citations

11

H-Index

23

Concepts

All Affiliations

École Polytechnique Fédérale de LausanneUniversité Grenoble AlpesCommissariat à l'Énergie Atomique et aux Énergies AlternativesLaboratoire d'Électronique des Technologies de l'InformationCEA Grenoble
AB

About

Arnab Biswas is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

10

10

382

2

Electrical Engineering

10

10

382

3

Applied Physics

9

9

370

4

Physics

7

7

261

5

Computer Engineering

1

1

12

Arnab Biswas

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12

Publications

456

Citations

11

H-Index

YearCitations

TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

Arnab Biswas, Surya Shankar Dan, C. Le Royer,

Microelectronic Engineering

2012

140

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Ali Saeidi, Arnab Biswas, Adrian Ionescu

Solid-State Electronics

2016

64

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Wolfgang A. Vitale, Emanuele Andrea Casu, Arnab Biswas,

Scientific Reports

2017

62

Investigation of tunnel field-effect transistors as a capacitor-less memory cell

Arnab Biswas, Nilay Daǧtekın, Antonios Bazigos,

Applied Physics Letters

2014

45

1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design

Arnab Biswas, Adrian M. Ionescu

IEEE Journal of the Electron Devices Society

2014

43

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Emanuele Andrea Casu, Wolfgang A. Vitale, Nicolò Oliva,

2016

21

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Luca De Michielis, Arnab Biswas, Livio Lattanzio,

Applied Physics Letters

2013

18

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Arnab Biswas, Gia Vinh Luong, M.F. Chowdhury,

IEEE Transactions on Electron Devices

2017

15

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

Surya Shankar Dan, Arnab Biswas, C. Le Royer,

IEEE Electron Device Letters

2011

13

Study of fin-tunnel FETs with doped pocket as capacitor-less 1T DRAM

Arnab Biswas, Adrian M. Ionescu

2014

12

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