Concepedia

Field-effect Transistors

Field-Effect Transistors is a type of semiconductor device that controls the flow of current between two terminals by modulating the conductivity of a channel through an electric field applied perpendicular to the channel, distinguished from other transistors by its reliance on majority carriers and voltage-controlled operation.

9.9K

Publications

552.7K

Citations

24.8K

Authors

2.9K

Institutions

Publications per year

2017–2026

1.9K

Variants

FetFetsField-effect Transistor

Parents

Children

Publications

9.9K

Black phosphorus field-effect transistors

Likai Li, Yijun Yu, Guo Jun Ye et al. · Nature Nanotechnology · 2014 · 8.4K citations · Full text

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Ballistic carbon nanotube field-effect transistors

Ali Javey, Jing Guo, Qian Wang et al. · Nature · 2003 · 3.2K citations

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Tunnel field-effect transistors as energy-efficient electronic switches

Adrian M. Ionescu, Heike Riel · Nature · 2011 · 2.9K citations · Full text

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Single- and multi-wall carbon nanotube field-effect transistors

Richard Martel, Thomas Schmidt, Herbert Shea et al. · Applied Physics Letters · 1998 · 2.8K citations · Full text

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Logic Circuits with Carbon Nanotube Transistors

Adrian Bachtold, P. Hadley, Takeshi Nakanishi et al. · Science · 2001 · 2.6K citations · Full text

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1–5 of 9.9K

Authors

24.8K

  1. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    104 publications · 9.2K citations

    47

    h-index

  2. JA
    Joerg Appenzeller

    Purdue University West Lafayette, United States

    45 publications · 10.4K citations

    37

    h-index

  3. DM
    Dago M. de Leeuw

    Philips (Netherlands), Netherlands

    47 publications · 6.5K citations

    34

    h-index

  4. PA
    Phaedon Avouris

    IBM Research - Thomas J. Watson Research Center, United States

    38 publications · 14.6K citations

    32

    h-index

  5. GH
    Gilles Horowitz

    Centre National de la Recherche Scientifique, France

    38 publications · 5.2K citations

    29

    h-index

1–5 of 24.8K

Institutions

2.9K

  1. Chinese Academy of Sciences

    Beijing, China

    57 h-index

    1.1K publications

    56.8K citations

  2. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    55 h-index

    518 publications

    74.9K citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    53 h-index

    834 publications

    50K citations

  4. Stanford University

    Stanford, United States

    51 h-index

    325 publications

    52.6K citations

  5. IBM (United States)

    Armonk, United States

    50 h-index

    442 publications

    32.4K citations

  6. Purdue University West Lafayette

    West Lafayette, United States

    50 h-index

    328 publications

    46.7K citations

  7. Japan Science and Technology Agency

    Tokyo, Japan

    50 h-index

    398 publications

    36.8K citations

  8. University of California, Berkeley

    Berkeley, United States

    46 h-index

    398 publications

    35.3K citations

1–8 of 2.9K

Venues

  1. Applied Physics Letters

    1.1K publications · 75.4K citations

    128

    h-index

  2. IEEE Transactions on Electron Devices

    1.2K publications · 62.2K citations

    110

    h-index

  3. IEEE Electron Device Letters

    706 publications · 45.1K citations

    98

    h-index

  4. Advanced Materials

    147 publications · 18.8K citations

    81

    h-index

  5. Journal of Applied Physics

    381 publications · 20.8K citations

    71

    h-index

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