Carrier Mobility

Carrier Mobility is a semiconductor physics metric that quantifies the ease with which charge carriers (electrons or holes) move through a conductive or semiconductive material under the influence of an electric field, distinguished from related transport properties by its direct proportionality to the drift velocity per unit electric field.

6.1K

Publications

423.5K

Citations

25.4K

Authors

2.9K

Institutions

Publications per year

2017–2026

2.6K

Authors

25.4K

  1. LZ
    Li‐Dong Zhao

    Beihang University, China

    44 publications · 5.5K citations

    31

    h-index

  2. KW
    Kenji Watanabe

    National Institute for Materials Science, Japan

    32 publications · 1.9K citations

    25

    h-index

  3. WH
    Wenping Hu

    Tianjin University, China

    33 publications · 2.6K citations

    25

    h-index

  4. TT
    Takashi Taniguchi

    National Institute for Materials Science, Japan

    30 publications · 1.7K citations

    24

    h-index

  5. IM
    Iain McCulloch

    Imperial College London, United Kingdom

    28 publications · 3.7K citations

    24

    h-index

1–5 of 25.4K

Venues

  1. Applied Physics Letters

    521 publications · 33.4K citations

    85

    h-index

  2. Advanced Materials

    156 publications · 23.7K citations

    81

    h-index

  3. Advanced Functional Materials

    177 publications · 16.4K citations

    77

    h-index

  4. Journal of the American Chemical Society

    JACS · 103 publications · 16.9K citations

    74

    h-index

  5. Nano Letters

    132 publications · 19.9K citations

    71

    h-index

1–5