Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors

TLDR

Organic‑inorganic hybrid materials combine the high carrier mobility of inorganic semiconductors with the solution processability of organics. The study aims to molecularly engineer the organic and inorganic components of these hybrids to further enhance low‑cost thin‑film transistor performance. Spin‑coated thin films of the perovskite (C₆H₅C₂H₄NH₃)₂SnI₄ form the conducting channel, achieving 0.6 cm² V⁻¹ s⁻¹ mobility and current modulation greater than 10⁴. The authors demonstrated a thin‑film field‑effect transistor using a solution‑processed perovskite hybrid channel, where oriented molecular‑scale composites of alternating organic and inorganic sheets yield spin‑coated films with the reported high mobility and current modulation.

Abstract

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C 6 H 5 C 2 H 4 NH 3 ) 2 SnI 4 form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10 4 . Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.