Charge Trapping is a physical phenomenon in semiconductor devices whereby charge carriers are captured and immobilized at localized defect states within the gate dielectric or at the interface of a MOS capacitor, altering the threshold voltage and reliability characteristics in memory devices.
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Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors
Ali Javey, Ophir Vermesh, Qian Wang et al. · Nano Letters · 2003 · 973 citations
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IBM Research - Thomas J. Watson Research Center, United States
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