G. Groeseneken - Concepedia

Author

G. Groeseneken

Also Known As

B. De Jaeger, B. Kaczer, Ben Kaczer, G Groeseneken, G. GROESENEKEN, G. Groeseneken, G. V. Groeseneken, G.V. Groeseneken, Groeseneken Guido, Groeseneken, Guido

1.3K

Publications

30.7K

Citations

H-Index

229

Concepts

All Affiliations

IMEC KU Leuven Liverpool John Moores University TU Wien

About

G. Groeseneken is an author at IMEC specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	78	565	27.9K
2	Applied Physics	73	457	24.2K
3	Natural Sciences	11	14	491
4	Education	8	8	329
5	Medicine	2	2	67

G. Groeseneken

594

Publications

28.5K

Citations

H-Index

Page 1

	Year	Citations
A reliable approach to charge-pumping measurements in MOS transistors G. Groeseneken, H.E. Maes, N. Beltran, IEEE Transactions on Electron Devices Device ModelingTransistor ConfigurationsElectrical EngineeringCharge StateEngineering	1984	1.3K
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R. Degraeve, G. Groeseneken, R. Bellens, IEEE Transactions on Electron Devices EngineeringGlow DischargeNew InsightsElectron SpectroscopyNanoelectronics	1998	637
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe, IEEE Transactions on Electron Devices EngineeringSemiconductor DeviceSemiconductorsRf SemiconductorTunneling Microscopy	2011	462
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation Paul Heremans, J. Witters, G. Groeseneken, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHigh Voltage EngineeringStress-induced Leakage CurrentApplied Physics	1989	436
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs Paul Heremans, R. Bellens, G. Groeseneken, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringHot-carrier DegradationEngineeringConsistent Model	1988	430
Tunnel field-effect transistor without gate-drain overlap Anne S. Verhulst, William G. Vandenberghe, Karen Maex, Applied Physics Letters Device ModelingElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics	2007	428
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates Koen Martens, Chi On Chui, Guy Brammertz, IEEE Transactions on Electron Devices Electrical EngineeringMos DevicesEngineeringInterface Trap DensityNanoelectronics	2008	361
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics A. Kerber, E. Cartier, L. Pantisano, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics	2003	357
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides R. Degraeve, G. Groeseneken, R. Bellens, EngineeringThin OxidesSemiconductor DeviceNanoelectronicsElectronic Packaging	2002	334
Origin of NBTI variability in deeply scaled pFETs B. Kaczer, Tibor Grasser, Ph. Roussel, Device ModelingElectrical EngineeringEngineeringNbti VariabilityPhysics	2010	304

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