G. Groeseneken

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations

Engineering, Electrical Engineering, Materials Science +17

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2011 · 467 citations

Engineering, Materials Science, Physics +17

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

Paul Heremans, J. Witters, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1989 · 438 citations

Engineering, Electrical Engineering, Aging +16

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · Applied Physics Letters · 2007 · 432 citations · Full text

Engineering, Electrical Engineering, Materials Science +15