H.E. Maes

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

Paul Heremans, J. Witters, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1989 · 438 citations

Engineering, Electrical Engineering, Aging +16

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Paul Heremans, R. Bellens, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1988 · 430 citations

Engineering, Electrical Engineering, Electronic Materials +16

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Koen Martens, Chi On Chui, Guy Brammertz et al. · IEEE Transactions on Electron Devices · 2008 · 363 citations

Engineering, Electrical Engineering, Materials Science +17