H.E. Maes - Concepedia

Author

H.E. Maes

Also Known As

H E Maes, H Maes, H. E. MAES, H. E. Maes, H. E. Maes H. E. Maes, H. Maes, H.E. Maes, Herman E Maes, Herman E. Maes, Herman E. Maes Herman E. Maes

388

Publications

11.2K

Citations

H-Index

140

Concepts

All Affiliations

IMEC KU Leuven

About

H.E. Maes is an author at IMEC specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	47	144	10.2K
2	Applied Physics	44	119	9.2K
3	Natural Sciences	6	6	469
4	Medicine	2	2	167
5	Education	1	1	13

H.E. Maes

153

Publications

10.4K

Citations

H-Index

Page 1

	Year	Citations
A reliable approach to charge-pumping measurements in MOS transistors G. Groeseneken, H.E. Maes, N. Beltran, IEEE Transactions on Electron Devices Device ModelingTransistor ConfigurationsElectrical EngineeringCharge StateEngineering	1984	1.3K
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R. Degraeve, G. Groeseneken, R. Bellens, IEEE Transactions on Electron Devices EngineeringGlow DischargeNew InsightsElectron SpectroscopyNanoelectronics	1998	637
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation Paul Heremans, J. Witters, G. Groeseneken, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHigh Voltage EngineeringStress-induced Leakage CurrentApplied Physics	1989	436
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs Paul Heremans, R. Bellens, G. Groeseneken, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringHot-carrier DegradationEngineeringConsistent Model	1988	430
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates Koen Martens, Chi On Chui, Guy Brammertz, IEEE Transactions on Electron Devices Electrical EngineeringMos DevicesEngineeringInterface Trap DensityNanoelectronics	2008	361
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics A. Kerber, E. Cartier, L. Pantisano, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics	2003	357
Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment Ingrid De Wolf, H.E. Maes, Stephen Jones Journal of Applied Physics EngineeringMechanical EngineeringPlanar StressMechanics Of MaterialsSilicon On Insulator	1996	348
Silicon-on-insulator 'gate-all-around device' J.-P. Colinge, M.-H. Gao, A. Romano‐Rodrı́guez, Semiconductor TechnologyElectrical EngineeringEngineeringSemiconductor InterfacesSilicon-on-insulator 'Gate-all-around Device	2002	346
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides R. Degraeve, G. Groeseneken, R. Bellens, EngineeringThin OxidesSemiconductor DeviceNanoelectronicsElectronic Packaging	2002	334
Transient enhanced diffusion of boron in Si Sachin Jain, Wim Schoenmaker, Richard Lindsay, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2002	233

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