Anne S. Verhulst - Concepedia

Author

Anne S. Verhulst

Also Known As

A S Verhulst, A Verhulst, A. S. Verhulst, A. Verhulst, A.S. Verhulst, Anne S Verhulst, Anne S. Verhulst, Anne Verhulst, M. Garcia Bardon, Silvaco Blaise

179

Publications

4.3K

Citations

H-Index

Concepts

All Affiliations

IMEC KU Leuven University of Antwerp The University of Texas at Dallas Indian Institute of Technology Bombay

About

Anne S. Verhulst is an author at IMEC specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	62	3.8K
2	Applied Physics	31	61	3.8K
3	Medicine	2	2	79
4	Education	1	1	110
5	Natural Sciences	1	1	43

Anne S. Verhulst

Publications

3.9K

Citations

H-Index

Page 1

	Year	Citations
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe, IEEE Transactions on Electron Devices EngineeringSemiconductor DeviceSemiconductorsRf SemiconductorTunneling Microscopy	2011	462
Tunnel field-effect transistor without gate-drain overlap Anne S. Verhulst, William G. Vandenberghe, Karen Maex, Applied Physics Letters Device ModelingElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics	2007	428
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor Anne S. Verhulst, Bart Sorée, Daniele Leonelli, Journal of Applied Physics Device ModelingElectrical EngineeringTfet PerformanceEngineeringTfet Physics	2010	252
Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates Anne S. Verhulst, William G. Vandenberghe, Karen Maex, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringHigh Tunnel RatesComplementary Tfets	2008	185
Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringGate-source OverlapPhysics	2012	150
Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET A. Walke, A. Vandooren, R. Rooyackers, IEEE Transactions on Electron Devices Trap-assisted TunnelingEngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2014	144
Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization Anne S. Verhulst, William G. Vandenberghe, Karen Maex, Journal of Applied Physics Device ModelingElectrical EngineeringEngineeringN-channel Nanowire TfetsPhysics	2008	138
Drain voltage dependent analytical model of tunnel field-effect transistors Anne S. Verhulst, Daniele Leonelli, R. Rooyackers, Journal of Applied Physics Device ModelingElectrical EngineeringTfet PerformanceEngineeringPhysics	2011	123
Figure of merit for and identification of sub-60 mV/decade devices William G. Vandenberghe, Anne S. Verhulst, Bart Sorée, Applied Physics Letters EngineeringEducationIntegrated CircuitsPower ElectronicsElectromagnetic Compatibility	2013	110
Analytical model for point and line tunneling in a tunnel field-effect transistor William G. Vandenberghe, Anne S. Verhulst, G. Groeseneken, Device ModelingElectrical EngineeringPoint TunnelingEngineeringSemiconductor Device	2008	106

Page 1