William G. Vandenberghe

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Akash Laturia, Maarten L. Van de Put, William G. Vandenberghe · npj 2D Materials and Applications · 2018 · 892 citations · Full text

Materials Science, Dielectric Properties, Boron Nitride +15

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2011 · 462 citations

Engineering, Semiconductor Device, Semiconductors +16

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · Applied Physics Letters · 2007 · 428 citations · Full text

Device Modeling, Electrical Engineering, Electronic Devices +14

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Anne S. Verhulst, Bart Sorée, Daniele Leonelli et al. · Journal of Applied Physics · 2010 · 252 citations

Device Modeling, Electrical Engineering, Tfet Performance +10

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · IEEE Electron Device Letters · 2008 · 185 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10