William G. Vandenberghe

Statistics

Publications

Citations

5.4K

H-Index

Active since

2007

Affiliations

The University of Texas at Dallas(Current)

IMEC

KU Leuven

University of Antwerp

Texas Instruments (United States)

William G. Vandenberghe is an author at The University of Texas at Dallas specializing in materials science, semiconductor physics, and semiconductor materials.

ORCID

Publications per year

2007–2024

Publications

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Akash Laturia, Maarten L. Van de Put, William G. Vandenberghe · npj 2D Materials and Applications · 2018 · 940 citations · Full text

Natural Sciences, Materials Science, Physics +15

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2011 · 467 citations

Engineering, Materials Science, Physics +17

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · Applied Physics Letters · 2007 · 432 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Anne S. Verhulst, Bart Sorée, Daniele Leonelli et al. · Journal of Applied Physics · 2010 · 255 citations

Engineering, Electrical Engineering, Microelectronics +16

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · IEEE Electron Device Letters · 2008 · 185 citations

Engineering, Electrical Engineering, Materials Science +15

1–5 of 72