Bart Sorée

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2011 · 462 citations

Engineering, Semiconductor Device, Semiconductors +16

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Anne S. Verhulst, Bart Sorée, Daniele Leonelli et al. · Journal of Applied Physics · 2010 · 252 citations

Device Modeling, Electrical Engineering, Tfet Performance +10

Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2012 · 150 citations

Device Modeling, Electrical Engineering, Engineering +12

Figure of merit for and identification of sub-60 mV/decade devices

William G. Vandenberghe, Anne S. Verhulst, Bart Sorée et al. · Applied Physics Letters · 2013 · 110 citations · Full text

Engineering, Education, Integrated Circuits +22

Impact of field-induced quantum confinement in tunneling field-effect devices

William G. Vandenberghe, Bart Sorée, Wim Magnus et al. · Applied Physics Letters · 2011 · 106 citations

Quantum Science, Electrical Engineering, Field-induced Quantum Confinement +14