Applied Physics Letters · 2013 · 110 citations · 15 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsSemiconductor PhysicsComplementary Metal-oxide-semiconductor DevicesField-effect Transistor SimulationField-effect Transistor Transfer CharacteristicsInput CharacteristicsOutput CharacteristicsSchottky Barrier CharacteristicsSubthreshold SwingTunneling Field-effect Transistors
A figure of merit I60 is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I60 has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I60 of 6×10−3 μA/μm but using theoretical simulations, we show that an I60 of up to 10 μA/μm should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance.
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Complementary tunneling transistor for low power application
Pengzhan Wang, K. Hilsenbeck, T. Nirschl et al. · Solid-State Electronics · 2004 · 519 citations
Engineering, Electrical Engineering, Electronic Materials +10
Ramanathan Gandhi, Zhixian Chen, Navab Singh et al. · IEEE Electron Device Letters · 2011 · 331 citations