Daniele Leonelli

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Anne S. Verhulst, Bart Sorée, Daniele Leonelli et al. · Journal of Applied Physics · 2010 · 252 citations

Device Modeling, Electrical Engineering, Tfet Performance +10

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking

Xinlv Duan, Junxiao Feng, Jiebin Niu et al. · IEEE Transactions on Electron Devices · 2022 · 154 citations

Electrical Engineering, Novel Vertical Channel-all-around, Engineering +13

Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2012 · 150 citations

Device Modeling, Electrical Engineering, Engineering +12

Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET

A. Walke, A. Vandooren, R. Rooyackers et al. · IEEE Transactions on Electron Devices · 2014 · 144 citations

Trap-assisted Tunneling, Engineering, Integrated Circuits +16

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

A. Vandooren, Daniele Leonelli, R. Rooyackers et al. · Solid-State Electronics · 2013 · 140 citations

Trap-assisted Tunneling, Electrical Engineering, Sige Hetero-junction Tunnel-fets +9