Daniele Leonelli

Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

Anne S. Verhulst, Bart Sorée, Daniele Leonelli et al. · Journal of Applied Physics · 2010 · 255 citations

Engineering, Electrical Engineering, Microelectronics +16

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking

Xinlv Duan, Junxiao Feng, Jiebin Niu et al. · IEEE Transactions on Electron Devices · 2022 · 174 citations

Engineering, Electrical Engineering, Materials Science +15

Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

Kuo-Hsing Kao, Anne S. Verhulst, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2012 · 151 citations

Engineering, Electrical Engineering, Microelectronics +15

Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET

A. Walke, A. Vandooren, R. Rooyackers et al. · IEEE Transactions on Electron Devices · 2014 · 147 citations

Engineering, Electrical Engineering, Materials Engineering +16

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

A. Vandooren, Daniele Leonelli, R. Rooyackers et al. · Solid-State Electronics · 2013 · 142 citations

Engineering, Electrical Engineering, Materials Engineering +13