Xinlv Duan

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking

Xinlv Duan, Junxiao Feng, Jiebin Niu et al. · IEEE Transactions on Electron Devices · 2022 · 174 citations

Engineering, Electrical Engineering, Materials Science +15

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, I_ON=1500 μA/μm@V_DS=1V and Retention Time>300s

Wendong Lu, Zhengyong Zhu, Kaifei Chen et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 57 citations

Engineering, Electrical Engineering, Microelectronics +13

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V_th + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

Kailiang Huang, Xinlv Duan, Junxiao Feng et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F² Area Cost

Chuanke Chen, Jinjuan Xiang, Xinlv Duan et al. · 2023 · 46 citations

Engineering, Electrical Engineering, Materials Science +12

A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application

Jingrui Guo, Kaizhen Han, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 44 citations

Engineering, Electrical Engineering, Physics +17