Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul, +18

Electrical EngineeringEngineeringTransistor Layout ParametersHigh-density Monolithic 3DScaled Transistor +13

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Adrian Chasin, J. Franco, K. Triantopoulos, +12

2021 IEEE International Electron Devices Meeting (IEDM)

EngineeringSemiconductor DeviceSemiconductorsDegradation ProcessPbti Reliability +14

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha, +19

2021 IEEE International Electron Devices Meeting (IEDM)

Electrical EngineeringCapacitorless DramEngineeringMemory ArchitectureIgzo-tft Architecture +11

A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability

B. Govoreanu, D. Crotti, Subhali Subhechha, +9

Non-volatile MemoryEngineeringEmerging Memory TechnologyBiomedical EngineeringIntegrated Circuits +15

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V_t > 0 V and I_on > 30 µA/µm

Subhali Subhechha, Nouredine Rassoul, A. Belmonte, +21

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Low-power ElectronicsElectrical EngineeringElectronic DevicesUltra-low Leakage Igzo-tftsEngineering +8

A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application

Jingrui Guo, Kaizhen Han, Subhali Subhechha, +11

2021 IEEE International Electron Devices Meeting (IEDM)

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics +13

Lowest I_OFF < 3×10⁻²¹ A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT

Attilio Belmonte, Shreya Kundu, Subhali Subhechha, +8

Active ModuleNon-volatile MemoryElectrical EngineeringCapacitorless DramIgzo-based 2T0c +12

Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor

Hongwei Tang, Harold Dekkers, Nouredine Rassoul, +7

IEEE Transactions on Electron Devices

Device ModelingSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +10

Quasi-optical terahertz polarizers enabled by inkjet printing of carbon nanocomposites

Arindam Das, Thomas M. Schutzius, Constantine M. Megaridis, +3

Applied Physics Letters

Materials ScienceThz PhotonicsTerahertz TechnologyOptical MaterialsEngineering +12

Oxygen Defect Stability in Amorphous, <i>C</i>-Axis Aligned, and Spinel IGZO

Michiel J. van Setten, H.F.W. Dekkers, Luka Ključar, +7

ACS Applied Electronic Materials

EngineeringSolid-state ChemistryOxygen Defect StabilityNanoelectronicsCharge Carrier Transport +15