2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications

Chia-Fu Lee, C.W. Lu, Cheng-En Lee et al. · 2022 · 77 citations

Engineering, Computer Engineering, Computer Science +13

PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch

P. Schuddinck, F. M. Bufler, Anita Farokhnejad et al. · 2022 · 55 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 22nm 128-kb MRAM Row/Column-Parallel In-Memory Computing Macro with Memory-Resistance Boosting and Multi-Column ADC Readout

Peter Deaville, Bonan Zhang, Naveen Verma · 2022 · 54 citations

Engineering, Computer Engineering, Computer Science +17

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V_th + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

Kailiang Huang, Xinlv Duan, Junxiao Feng et al. · 2022 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

A 40nm Analog-Input ADC-Free Compute-in-Memory RRAM Macro with Pulse-Width Modulation between Sub-arrays

Hongwu Jiang, Wantong Li, Shanshi Huang et al. · 2022 · 50 citations

Engineering, Computer Engineering, Computer Science +17