Junxiao Feng

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking

Xinlv Duan, Junxiao Feng, Jiebin Niu et al. · IEEE Transactions on Electron Devices · 2022 · 174 citations

Engineering, Electrical Engineering, Materials Science +15

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V_th + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

Kailiang Huang, Xinlv Duan, Junxiao Feng et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

Qian Chen, Lingfei Wang, Xinlv Duan et al. · IEEE Electron Device Letters · 2022 · 34 citations

Engineering, Electrical Engineering, Materials Engineering +16

Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking

Xinlv Duan, Kailiang Huang, Junxiao Feng et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 31 citations

Engineering, Electrical Engineering, Materials Science +11

Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability

Jingrui Guo, Ying Sun, Lingfei Wang et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 22 citations

Engineering, Electrical Engineering, Materials Science +17