Lingfei Wang

A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application

Jingrui Guo, Kaizhen Han, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 44 citations

Engineering, Electrical Engineering, Physics +17

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high G_m,max of 559 µS/µm at V_DS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec

Kaifei Chen, Jiebin Niu, Guanhua Yang et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 36 citations

Engineering, Electrical Engineering, Materials Science +16

Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

Qian Chen, Lingfei Wang, Xinlv Duan et al. · IEEE Electron Device Letters · 2022 · 34 citations

Engineering, Electrical Engineering, Materials Engineering +16

Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability

Jingrui Guo, Ying Sun, Lingfei Wang et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 22 citations

Engineering, Electrical Engineering, Materials Science +17