PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch

P. Schuddinck, F. M. Bufler, Anita Farokhnejad, Gioele Mirabelli, A. Vandooren, Bilal Chehab, Anshul Gupta, C. Roda Neve, Geert Hellings, Julien Ryckaert

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 55 citations · 1 references

Concepts

Abstract

We evaluate Power-Performance-Area & Cost (PPAC) for nanosheet (NS), forksheet (FS), monolithic & sequential Complementary FET (CFET) at 5 & 4 track (T) designs with tight gate pitch (CPP) & metal pitch (MP). While NS & FS prove unsuitable for 4T designs, CFETs provide a performant & cost-effective 4T solution.

References

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