Geert Hellings

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman et al. · Journal of The Electrochemical Society · 2008 · 263 citations

Materials Science, Dislocation Densities, Electrical Engineering +11

Comphy — A compact-physics framework for unified modeling of BTI

G. Rzepa, J. Franco, Barry O’Sullivan et al. · Microelectronics Reliability · 2018 · 196 citations

Engineering, Physics, Numerical Simulation +5

Electrical TCAD Simulations of a Germanium pMOSFET Technology

Geert Hellings, Geert Eneman, Raymond Krom et al. · IEEE Transactions on Electron Devices · 2010 · 104 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +14

Challenges and opportunities in advanced Ge pMOSFETs

Eddy Simoen, Jérôme Mitard, Geert Hellings et al. · Materials Science in Semiconductor Processing · 2012 · 79 citations

Low-power Electronics, Electrical Engineering, Engineering +6

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n Junctions

Geert Eneman, M. Wiot, Antoine Brugère et al. · IEEE Transactions on Electron Devices · 2008 · 74 citations

Engineering, Donor Concentration, Semiconductor Device +17