Raymond Krom

Electrical TCAD Simulations of a Germanium pMOSFET Technology

Geert Hellings, Geert Eneman, Raymond Krom et al. · IEEE Transactions on Electron Devices · 2010 · 104 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +14

Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs

Dennis Lin, A. Alian, Shubhanshu Gupta et al. · 2012 · 39 citations

Electrical Engineering, Engineering, Physics +10

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO₂ Gate Dielectric

Jérôme Mitard, Brice De Jaeger, Geert Eneman et al. · Japanese Journal of Applied Physics · 2011 · 23 citations

Materials Engineering, High Hole Mobility, Electrical Engineering +11

Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel

Geert Hellings, Liesbeth Witters, Raymond Krom et al. · 2010 · 20 citations

Low-power Electronics, Electrical Engineering, Pmosfet Structure +14

Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs

M. Togo, J. W. Lee, L. Pantisano et al. · 2012 · 13 citations

Materials Science, Materials Engineering, Electrical Engineering +15