Dennis Lin

Germanium surface passivation and atomic layer deposition of high-<i>k</i>dielectrics—a tutorial review on Ge-based MOS capacitors

Qi Xie, Shaoren Deng, Marc Schaekers et al. · Semiconductor Science and Technology · 2012 · 155 citations

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni V. Resta, Yashwanth Balaji, Dennis Lin et al. · ACS Nano · 2018 · 149 citations · Full text

A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors

Guy Brammertz, A. Alian, Dennis Lin et al. · IEEE Transactions on Electron Devices · 2011 · 95 citations

Device Modeling, Border Trap Model, Electrical Engineering +14

2D materials: roadmap to CMOS integration

Cedric Huyghebaert, T. Schram, Quentin Smets et al. · 2018 · 94 citations

Engineering, Device Integration, Low Dimensional Material +17

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19