InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve Teugels, +7

IEEE Electron Device Letters

SemiconductorsNanowire DevicesElectrical EngineeringSemiconductor TechnologyEngineering +12

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo, +21

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device +17

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Clément Merckling, Niamh Waldron, Shidong Jiang, +8

Journal of Applied Physics

Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringNanoelectronics +11

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Marc Heyns, A. Alian, Guy Brammertz, +32

Wide-bandgap SemiconductorEngineeringVlsi DesignIii/v DevicesSemiconductor Device +16

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

Niamh Waldron, Dae-Hyun Kim, Jesús A. del Alamo

IEEE Transactions on Electron Devices

EngineeringElectronic Design AutomationElectronic DesignComputer ArchitectureIntegrated Circuits +14

First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs

E. Capogreco, Liesbeth Witters, Hiroaki Arimura, +21

IEEE Transactions on Electron Devices

Semiconductor TechnologyElectrical EngineeringEngineeringRf SemiconductorPhysics +11

Selective area growth of high quality InP on Si (001) substrates

G. Wang, Maarten Leys, Roger Loo, +9

Applied Physics Letters

Materials EngineeringMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering +13

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

Liesbeth Witters, Hiroaki Arimura, Farid Sebaai, +26

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics +10

(Invited) Vertical Nanowire FET Integration and Device Aspects

A. Veloso, Efrain Altamirano Sánchez, S. Brus, +25

ECS Transactions

Low-power ElectronicsElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design +11

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Weiming Guo, L. Daté, V. Peña, +11

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects +13