Niamh Waldron

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve Teugels et al. · IEEE Electron Device Letters · 2014 · 97 citations

Semiconductors, Nanowire Devices, Electrical Engineering +14

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Clément Merckling, Niamh Waldron, Shidong Jiang et al. · Journal of Applied Physics · 2014 · 88 citations · Full text

Materials Science, Materials Engineering, Epitaxial Growth +13

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Marc Heyns, A. Alian, Guy Brammertz et al. · 2011 · 60 citations

Wide-bandgap Semiconductor, Engineering, Vlsi Design +18

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

Niamh Waldron, Dae-Hyun Kim, Jesús A. del Alamo · IEEE Transactions on Electron Devices · 2009 · 60 citations

Engineering, Electronic Design Automation, Electronic Design +16