Niamh Waldron

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve Teugels et al. · IEEE Electron Device Letters · 2014 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Electrical Engineering, Materials Science +15

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Clément Merckling, Niamh Waldron, Shidong Jiang et al. · Journal of Applied Physics · 2014 · 88 citations · Full text

Engineering, Materials Engineering, Materials Science +17

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

Uthayasankaran Peralagu, A. Alian, V. Putcha et al. · 2019 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Marc Heyns, A. Alian, Guy Brammertz et al. · 2011 · 60 citations

Engineering, Electrical Engineering, Materials Science +16