Uthayasankaran Peralagu

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

Uthayasankaran Peralagu · 2019 · 74 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +16

Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

Kenichiro Takakura, V. Putcha, Eddy Simoen et al. · IEEE Transactions on Electron Devices · 2020 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Noise Psd Characteristics +10

GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

Bertrand Parvais, A. Alian, Uthayasankaran Peralagu et al. · 2020 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

Yen-Chun Fu, Uthayasankaran Peralagu, David Alan John Millar et al. · Applied Physics Letters · 2017 · 21 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +18

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu, Bertrand Parvais, Uthayasankaran Peralagu et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 19 citations