2022 International Electron Devices Meeting (IEDM)

First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu et al. · 2022 · 75 citations

Engineering, Electrical Engineering, Materials Science +12

Enabling Next Generation 3D Heterogeneous Integration Architectures on Intel Process

Adel Elsherbini, K. Jun, Shawna M. Liff et al. · 2022 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +17

First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

Kaiming Cai, Giacomo Talmelli, Kaiquan Fan et al. · 2022 · 57 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, I_ON=1500 μA/μm@V_DS=1V and Retention Time>300s

Wendong Lu, Zhengyong Zhu, Kaifei Chen et al. · 2022 · 57 citations

Engineering, Electrical Engineering, Microelectronics +13

A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power Efficiency and Performance for Mobile SoC and High Performance Computing Applications

Shien-Yang Wu, M.C. Chiang, C.Y. Lin et al. · 2022 · 56 citations

Engineering, Electrical Engineering, High-performance Computing +17