Wendong Lu

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, I_ON=1500 μA/μm@V_DS=1V and Retention Time>300s

Wendong Lu, Zhengyong Zhu, Kaifei Chen et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 57 citations

Engineering, Electrical Engineering, Microelectronics +13

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS₂/WSe₂

Menggan Liu, Jiebin Niu, Guanhua Yang et al. · Advanced Electronic Materials · 2022 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +13

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high G_m,max of 559 µS/µm at V_DS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec

Kaifei Chen, Jiebin Niu, Guanhua Yang et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 36 citations

Engineering, Electrical Engineering, Materials Science +16

Contact Length Scaling in Dual-Gate IGZO TFTs

Zijing Wu, Jiebin Niu, Congyan Lu et al. · IEEE Electron Device Letters · 2024 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (<10ns), Record-Low Energy (<10fJ) of Data Transfer and Ultra-Long Data Retention (>5000s)

Menggan Liu, Zhi Li, Wendong Lu et al. · 2024 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +17