Concepedia

Zijing Wu

ZW

Statistics

Publications

6

Citations

128

H-Index

6

Active since

2023

Affiliations

Chinese Academy of Sciences(Current)

Institute of Microelectronics

University of Cambridge

Ida Darwin hospital

Zijing Wu is an author at Chinese Academy of Sciences specializing in semiconductor devices, materials science, and device scaling effects.

Publications per year

2023–2024

6

Publications

6

Contact Length Scaling in Dual-Gate IGZO TFTs

Zijing Wu, Jiebin Niu, Congyan Lu et al. · IEEE Electron Device Letters · 2024 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (<10ns), Record-Low Energy (<10fJ) of Data Transfer and Ultra-Long Data Retention (>5000s)

Menggan Liu, Zhi Li, Wendong Lu et al. · 2024 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +17

Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell V<sub>TH</sub> Compensation and ΔV<sub>SN</sub>/ΔV<sub>DATA</sub> Boosting Technique

Kaifei Chen, Zhengyong Zhu, Wendong Lu et al. · 2023 · 19 citations

Engineering, Electrical Engineering, Materials Science +8

Novel 4F<sup>2</sup> Multi-Bit Dual-Gate 2T0C for High-Density DRAM with Improved Vertical-Channel IGZO TFTs by Self-Aligned Single-Step Process

Fuxi Liao, Zhengyong Zhu, Kaifei Chen et al. · 2024 · 16 citations

Engineering, Electrical Engineering, Electronic Materials +8

Demonstration of Large MW and Prominent Endurance in a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> FeFET With IGZO Channel Utilizing Postdeposition Annealing

Pengfei Jiang, Tiancheng Gong, Wei Wei et al. · IEEE Electron Device Letters · 2024 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

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