Tiancheng Gong - Concepedia

Author

Tiancheng Gong

Chinese Academy of Sciences ORCID

Also Known As

T. Gong, Tian-cheng Gong, TianCheng Gong, Tiancheng Gong, Wei Wei

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences Peng Cheng Laboratory The Synergetic Innovation Center for Advanced Materials

About

Tiancheng Gong is an author at Chinese Academy of Sciences specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	26	1K
2	Applied Physics	16	21	847
3	Medicine	2	2	59
4	Natural Sciences	1	1	32
5	Chemical Engineering	1	1	33

Tiancheng Gong

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
A highly CMOS compatible hafnia-based ferroelectric diode Qing Luo, Yan Cheng, Jianguo Yang, Nature Communications	2020	273
Wake‐Up Effect in HfO<sub>2</sub>‐Based Ferroelectric Films Pengfei Jiang, Qing Luo, Xiaoxin Xu, Advanced Electronic Materials Materials ScienceMultiferroicsEngineeringElectronic MaterialsFerroelectric Application	2020	138
Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application Qing Luo, Xumeng Zhang, Y. Hu, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureEmbedded Memory Application	2018	85
Permeability evolution and mesoscopic cracking behaviors of liquid nitrogen cryogenic freeze fracturing in low permeable and heterogeneous coal Guangzhi Yin, Delei Shang, Minghui Li, Powder Technology Freeze-thaw CyclingHeterogeneous CoalPermeability EvolutionEngineeringMechanical Engineering	2017	74
Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform Hongye Yuan, Yuanquan Huang, Tiancheng Gong, IEEE Electron Device Letters	2024	66
Robust Breakdown Reliability and Improved Endurance in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Using Grain Boundary Interruption Yannan Xu, Yang Yang, Shengjie Zhao, IEEE Transactions on Electron Devices ReliabilityElectrical EngineeringReliability EngineeringEngineeringGrain Boundaries	2021	63
Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics Peng Yuan, Ge‐Qi Mao, Yan Cheng, Nano Research	2022	58
Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation Xiaoxin Xu, Hangbing Lv, Hongtao Liu, IEEE Electron Device Letters Non-volatile MemoryEngineeringNanoelectronicsMemoryMemory Device	2014	57
Fully CMOS compatible 3D vertical RRAM with self-aligned self-selective cell enabling sub-5nm scaling Xiaoxin Xu, Qing Luo, Tiancheng Gong, Non-volatile MemoryEngineeringEmerging Memory TechnologyInter-layer LeakageComputer Architecture	2016	52
BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond Hangbing Lv, Xiaoxin Xu, Peng Yuan, Hardware SecurityNon-volatile MemoryElectrical EngineeringExtra MaskEngineering	2017	50

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