Lieve Teugels

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 177 citations

Electrical Engineering, Engineering, Transistor Layout Parameters +15

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve Teugels et al. · IEEE Electron Device Letters · 2014 · 97 citations

Semiconductors, Nanowire Devices, Electrical Engineering +14

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 62 citations

Electrical Engineering, Capacitorless Dram, Engineering +13

Investigation of Percarbonate Based Slurry Chemistry for Controlling Galvanic Corrosion during CMP of Ruthenium

Michael Türk, S.E. Rock, H. P. Amanapu et al. · ECS Journal of Solid State Science and Technology · 2013 · 55 citations

Engineering, Controlling Galvanic Corrosion, Chemistry +16