A. Belmonte

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 69 citations

Engineering, Materials Engineering, Materials Science +7

Hourglass concept for RRAM: A dynamic and statistical device model

R. Degraeve, A. Fantini, Nagarajan Raghavan et al. · 2014 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V_t > 0 V and I_on > 30 µA/µm

Subhali Subhechha, Nouredine Rassoul, A. Belmonte et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 47 citations

Engineering, Electrical Engineering, Materials Science +13

Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors

Shankha Mukherjee, Jasper Bizindavyi, Y-C. Luo et al. · 2023 · 36 citations

Natural Sciences, Electrical Engineering, Materials Science +15

Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy

Zhicheng Wu, Adrian Chasin, J. Franco et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 24 citations

Engineering, Electrical Engineering, Physics +17