Adrian Chasin

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 192 citations

Engineering, Si Nws, Bulk Si Substrates +16

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 177 citations

Electrical Engineering, Engineering, Transistor Layout Parameters +15

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 149 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization

R. Ritzenthaler, Hans Mertens, V. Peña et al. · 2018 · 96 citations

Engineering, Vlsi Design, Si Gaa Devices +16

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

Adrian Chasin, Soeren Steudel, Kris Myny et al. · Applied Physics Letters · 2012 · 91 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13