Adrian Chasin

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 198 citations

Engineering, Electrical Engineering, Materials Science +17

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 194 citations

Engineering, Electrical Engineering, Materials Science +16

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization

R. Ritzenthaler, Hans Mertens, V. Peña et al. · 2018 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

Adrian Chasin, Soeren Steudel, Kris Myny et al. · Applied Physics Letters · 2012 · 92 citations

Engineering, Electrical Engineering, Materials Science +17