Nouredine Rassoul

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 177 citations

Electrical Engineering, Engineering, Transistor Layout Parameters +15

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Adrian Chasin, J. Franco, K. Triantopoulos et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 65 citations

Engineering, Semiconductor Device, Semiconductors +16

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 62 citations

Electrical Engineering, Capacitorless Dram, Engineering +13

Direct metal etch of ruthenium for advanced interconnect

Sara Paolillo, Danny Wan, Frédéric Lazzarino et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2018 · 53 citations

Engineering, Pattern Transfer, Solid-state Chemistry +17

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V_t > 0 V and I_on > 30 µA/µm

Subhali Subhechha, Nouredine Rassoul, A. Belmonte et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 45 citations

Low-power Electronics, Electrical Engineering, Electronic Devices +10