H. Oh

Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory

H. Oh, B. Cho, W.Y. Cho et al. · IEEE Journal of Solid-State Circuits · 2005 · 79 citations

Engineering, Computer Engineering, Electrical Engineering +11

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 69 citations

Engineering, Materials Engineering, Materials Science +7

IGZO-Based Compute Cell for Analog In-Memory Computing—DTCO Analysis to Enable Ultralow-Power AI at Edge

D. Saito, Jonas Doevenspeck, Stefan Cosemans et al. · IEEE Transactions on Electron Devices · 2020 · 28 citations

Engineering, Computer Engineering, Electrical Engineering +15

High-performance (<tex>$\text{EOT} < 0.4\text{nm}$</tex>, Jg∼10⁻⁷ A/cm²) ALD-deposited Ru\SrTiO<inf>3</inf> stack for next generations DRAM pillar capacitor

M. Popovici, Attilio Belmonte, H. Oh et al. · 2018 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +15