IEEE Journal of Solid-State Circuits · 2005 · 79 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMemoryMicroelectronicsMemory DevicesMemory ManagementMemory Subsystem DesignMemory Circuit DesignNon-volatile Memory DesignPhase-change MemoryRandom Access Memory (Ram)Random-access Memory
The write performance of the 1.8-V 64-Mb phase-change random access memory (PRAM) has been improved, which was developed based on 0.12-/spl mu/m CMOS technology. For the improvement of RESET and SET distributions, a cell current regulator scheme and multiple step-down pulse generator were employed, respectively. The read access time and SET write time are 68 ns and 180 ns, respectively.
4
An 8Mb demonstrator for high-density 1.8V Phase-Change Memories
F. Bedeschi, Claudio Resta, O. Khouri et al. · 2004 · 93 citations
Engineering, Computer Engineering, Electrical Engineering +16