Phase-change Memory
Phase-Change Memory is a non-volatile solid-state memory technology that stores data by exploiting the reversible phase transition between amorphous and crystalline states of chalcogenide materials to represent binary information.
1.9K
Publications
111.9K
Citations
4.8K
Authors
832
Institutions
Publications per year
2017–2026
576
Variants
PcmPhase Change Memory
1.9K
H.‐S. Philip Wong, Simone Raoux, Sang‐Bum Kim et al. · Proceedings of the IEEE · 2010 · 1.8K citations
Architecting phase change memory as a scalable dram alternative
Benjamin C. Lee, Engin İpek, Onur Mutlu et al. · 2009 · 1.4K citations
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Shanghai Institute of Microsystem and Information Technology, China
205 publications · 7.8K citations
45
h-index
Shanghai Institute of Microsystem and Information Technology, China
84 publications · 3.6K citations
35
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35
h-index
34
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Shanghai Institute of Microsystem and Information Technology, China
111 publications · 3.7K citations
34
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832

Chinese Academy of Sciences
Beijing, China
49 h-index
1.3K publications
52.4K citations
Shanghai Institute of Microsystem and Information Technology
Shanghai, China
48 h-index
1.3K publications
50.4K citations
IBM Research - Zurich
Rüschlikon, Switzerland
39 h-index
365 publications
46.4K citations
Politecnico di Milano
Milan, Italy
39 h-index
265 publications
17.1K citations
Stanford University
Stanford, United States
39 h-index
336 publications
30.8K citations
IBM (United States)
Armonk, United States
37 h-index
368 publications
32.5K citations
RWTH Aachen University
Aachen, Germany
35 h-index
190 publications
17.6K citations
IBM Research - Almaden
San Jose, United States
34 h-index
297 publications
43.8K citations
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158 publications · 7.6K citations
49
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99 publications · 5.6K citations
38
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68 publications · 5.4K citations
33
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JJAP · 63 publications · 2.5K citations
26
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31 publications · 1.4K citations
25
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