Phase-change Memory

Phase-Change Memory is a non-volatile solid-state memory technology that stores data by exploiting the reversible phase transition between amorphous and crystalline states of chalcogenide materials to represent binary information.

1.9K

Publications

111.9K

Citations

4.8K

Authors

832

Institutions

Publications per year

2017–2026

576

Variants

PcmPhase Change Memory

Authors

4.8K

  1. ZS
    Zhitang Song

    Shanghai Institute of Microsystem and Information Technology, China

    205 publications · 7.8K citations

    45

    h-index

  2. LW
    Liangcai Wu

    Shanghai Institute of Microsystem and Information Technology, China

    84 publications · 3.6K citations

    35

    h-index

  3. AS
    Abu Sebastian

    IBM Research - Zurich, Switzerland

    61 publications · 6.9K citations

    35

    h-index

  4. DI
    Daniele Ielmini

    Politecnico di Milano, Italy

    73 publications · 4.8K citations

    34

    h-index

  5. SS
    Sannian Song

    Shanghai Institute of Microsystem and Information Technology, China

    111 publications · 3.7K citations

    34

    h-index

1–5 of 4.8K

Venues

  1. Applied Physics Letters

    158 publications · 7.6K citations

    49

    h-index

  2. Journal of Applied Physics

    99 publications · 5.6K citations

    38

    h-index

  3. IEEE Transactions on Electron Devices

    68 publications · 5.4K citations

    33

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 63 publications · 2.5K citations

    26

    h-index

  5. Scientific Reports

    31 publications · 1.4K citations

    25

    h-index

1–5