M. Togo

Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

J. Franco, B. Kaczer, M. Toledano-Luque et al. · 2012 · 92 citations

Engineering, Electrical Engineering, Microelectronics +16

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

L.-Å. Ragnarsson, T. Chiarella, M. Togo et al. · Microelectronic Engineering · 2011 · 61 citations

Engineering, Materials Engineering, Materials Science +14

Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements

Felice Crupi, Massimo Alioto, J. Franco et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 2012 · 43 citations

Engineering, Electrical Engineering, Microelectronics +16

Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias

J. Franco, B. Kaczer, Geert Eneman et al. · 2011 · 39 citations

Engineering, Electrical Engineering, Electronic Materials +16

Impact of through silicon via induced mechanical stress on fully depleted Bulk FinFET technology

Wei Guo, Geert Van der Plas, Alojz Ivankoviç et al. · 2012 · 36 citations

Engineering, Electrical Engineering, Electronic Materials +16