M. Togo

Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

J. Franco, B. Kaczer, M. Toledano-Luque et al. · 2012 · 91 citations

Engineering, Scaling Rule, Oxide Defect +16

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

L.-Å. Ragnarsson, T. Chiarella, M. Togo et al. · Microelectronic Engineering · 2011 · 61 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements

Felice Crupi, Massimo Alioto, J. Franco et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 2012 · 43 citations

Device Modeling, Low-power Electronics, Electrical Engineering +14

Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias

J. Franco, B. Kaczer, Geert Eneman et al. · 2011 · 39 citations

Superior Nbti Reliability, Electrical Engineering, Sige Device +15

Impact of through silicon via induced mechanical stress on fully depleted Bulk FinFET technology

Wei Guo, Geert Van der Plas, Alojz Ivankoviç et al. · 2012 · 36 citations

Engineering, Mechanical Engineering, Silicon On Insulator +18