Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +17

Defect energy levels in HfO2 high-dielectric-constant gate oxide

K. Xiong, John Robertson, Michael C. Gibson et al. · Applied Physics Letters · 2005 · 505 citations · Full text

Natural Sciences, Materials Science, Physics +17

Characterization of ultra-thin oxides using electrical C-V and I-V measurements

John R. Hauser, Khaled Ahmed · 1998 · 371 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Shinichi Takagi, Mariko Takayanagi · Japanese Journal of Applied Physics · 2002 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

Efficient multi-V<inf>T</inf> FDSOI technology with UTBOX for low power circuit design

C. Fenouillet-Béranger, Olivier Thomas, P. Perreau et al. · 2010 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +8