On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, Akira Toriumi, M. Iwase, +1

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +13

On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

Shinichi Takagi, Akira Toriumi, M. Iwase, +1

IEEE Transactions on Electron Devices

EngineeringSurface OrientationSilicon On InsulatorSemiconductor DeviceSemiconductors +14

A study of photon emission from n-channel MOSFET's

Akira Toriumi, M. Yoshimi, M. Iwase, +2

IEEE Transactions on Electron Devices

Semiconductor TechnologyPhotonicsElectrical EngineeringEngineeringPhysics +13

On the universality of inversion-layer mobility in n- and p-channel MOSFETs

Shinichi Takagi, M. Iwase, Akira Toriumi

Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +12

Photoelectrolysis of water with TiO2-covered solar-cell electrodes

Hiroshi Morisaki, Teruyoshi Watanabe, M. Iwase, +1

Applied Physics Letters

Materials ScienceChemical EngineeringEngineeringTio2–solar-cell Hybrid StructureEnergy Conversion +13

Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface

Akiko Ohata, Akira Toriumi, M. Iwase, +1

Journal of Applied Physics

Correlated RtssEngineeringIntegrated CircuitsSilicon On InsulatorRandom Telegraph Signals +18

Tetragonal germanium flims deposited by the cluster-beam evaporation technique

Seiichi Sato, Satoshi Nozaki, Hiroshi Morisaki, +1

Applied Physics Letters

Materials EngineeringMaterials ScienceRoom TemperatureIi-vi SemiconductorEngineering +13

Electron Mobility in Si Inversion Layers

Kazuo Masaki, Chihiro Hamaguchi, Kenji Taniguchi, +1

Japanese Journal of Applied Physics

Semiconductor TechnologyElectrical EngineeringGate Voltage DependenceEngineeringSemiconductor Device +10

High-performance 0.10- mu m CMOS devices operating at room temperature

M. Iwase, Tomohisa Mizuno, Masaru Takahashi, +8

IEEE Electron Device Letters

Low-power ElectronicsRoom TemperatureElectrical EngineeringElectronic DevicesEngineering +12

Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

Akira Toriumi, M. Yoshimi, M. Iwase, +2

Surface Science

Device ModelingElectrical EngineeringEngineeringExperimental DeterminationNanoelectronics +6