Akira Toriumi - Concepedia

Author

Akira Toriumi

Also Known As

A Toriumi, A. Toriumi, AKira Toriumi, Akira TORIUMI, Akira Toriumi, Akira Toriumi Akira Toriumi, K. Nagashio, Toriumi, Akira

866

Publications

15.8K

Citations

H-Index

142

Concepts

All Affiliations

The University of Tokyo Toshiba (Japan)National Institute of Advanced Industrial Science and Technology Japan Science and Technology Agency Association of Super-Advanced Electronics

About

Akira Toriumi is an author at The University of Tokyo specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	60	243	14.2K
2	Applied Physics	58	224	13.4K
3	Natural Sciences	11	12	267
4	Education	1	1	11
5	Social Sciences	1	1	42

Akira Toriumi

253

Publications

14.7K

Citations

H-Index

Page 1

	Year	Citations
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration S. Takagi, Akira Toriumi, M. Iwase, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1994	1.5K
Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's Tomohisa Mizuno, J. Okumtura, Akira Toriumi IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1994	569
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface Tomonori Nishimura, Koji Kita, Akira Toriumi Applied Physics Letters EngineeringInterconnect (Integrated Circuits)Semiconductor DeviceTunneling MicroscopyNanoelectronics	2007	479
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation Shinichi Takagi, Akira Toriumi, M. Iwase, IEEE Transactions on Electron Devices EngineeringSurface OrientationSilicon On InsulatorSemiconductor DeviceSemiconductors	1994	363
Origin of electric dipoles formed at high-k/SiO2 interface Koji Kita, Akira Toriumi Applied Physics Letters Dipole FormationElectrical EngineeringEngineeringPhysicsNanoelectronics	2009	331
Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm Xuan Tian, Shigehisa Shibayama, Tomonori Nishimura, Applied Physics Letters EngineeringMultiferroicsFerroelectric ApplicationMaterials ScienceOxide Heterostructures	2018	227
A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film Tomonori Nishimura, Koji Kita, Akira Toriumi Applied Physics Express EngineeringImpurity DopingSemiconductor DeviceFermi Level PinningSemiconductors	2008	217
Electrical transport properties of graphene on SiO2 with specific surface structures Kosuke Nagashio, Tadahiro Yamashita, Tomonori Nishimura, Journal of Applied Physics Materials ScienceGraphene NanomeshesElectrical EngineeringGraphene Quantum DotEngineering	2011	205
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology Tomohisa Mizuno, Shinichi Takagi, Naoharu Sugiyama, IEEE Electron Device Letters Materials EngineeringSimox TechnologyElectrical EngineeringStrained-si MosfetEngineering	2000	202
Kinetic pathway of the ferroelectric phase formation in doped HfO2 films Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Journal of Applied Physics EngineeringSolid-state ChemistryChemistryFerroelectric Phase FormationDopant Ionic Size	2017	202

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