Tomohisa Mizuno

Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

Tomohisa Mizuno, J. Okumtura, Akira Toriumi · IEEE Transactions on Electron Devices · 1994 · 572 citations

Engineering, Computer Engineering, Electrical Engineering +16

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Tomohisa Mizuno, Shinichi Takagi, Naoharu Sugiyama et al. · IEEE Electron Device Letters · 2000 · 202 citations

Engineering, Electrical Engineering, Materials Science +15

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Tsutomu Tezuka, Naoharu Sugiyama, Tomohisa Mizuno et al. · Japanese Journal of Applied Physics · 2001 · 185 citations

Engineering, Electrical Engineering, Materials Engineering +16

An all-digital analog-to-digital converter with 12-μV/LSB using moving-average filtering

T. Watanabe, Tomohisa Mizuno, Y. Makino · IEEE Journal of Solid-State Circuits · 2003 · 137 citations

Engineering, Electrical Engineering, Analog Electronics +15

Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

Shinichi Takagi, Tomohisa Mizuno, Tetsuo Tezuka et al. · 2004 · 89 citations

Engineering, Electrical Engineering, Materials Engineering +17