Naoharu Sugiyama

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai et al. · Applied Physics Express · 2019 · 341 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Shinichi Takagi, Toshifumi Iisawa, Tsutomu Tezuka et al. · IEEE Transactions on Electron Devices · 2008 · 340 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

Tetsuo Tezuka, Naoharu Sugiyama, Shinichi Takagi · Applied Physics Letters · 2001 · 290 citations

Engineering, Materials Engineering, Materials Science +17

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama et al. · Applied Physics Letters · 2003 · 260 citations

Engineering, Materials Engineering, Materials Science +17

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Tomohisa Mizuno, Shinichi Takagi, Naoharu Sugiyama et al. · IEEE Electron Device Letters · 2000 · 202 citations

Engineering, Electrical Engineering, Materials Science +15