Tsutomu Tezuka

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Shinichi Takagi, Toshifumi Iisawa, Tsutomu Tezuka et al. · IEEE Transactions on Electron Devices · 2008 · 337 citations

Low-power Electronics, Power Consumption, Electrical Engineering +14

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama et al. · Applied Physics Letters · 2003 · 259 citations

Engineering, Strained Ge-on-insulator, Optoelectronic Devices +18

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Tsutomu Tezuka, Naoharu Sugiyama, Tomohisa Mizuno et al. · Japanese Journal of Applied Physics · 2001 · 184 citations

Sige Channels, Engineering, Ge Fraction +16

High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing

Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta et al. · Applied Physics Express · 2014 · 73 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai et al. · Thin Solid Films · 2005 · 65 citations

Electrical Engineering, Engineering, Nanoelectronics +4