Keiji Ikeda

High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai et al. · IEEE Electron Device Letters · 2005 · 128 citations

Electrical Engineering, Engineering, Nanoelectronics +9

Gate dielectric formation and MIS interface characterization on Ge

Shinichi Takagi, Tatsuro Maeda, Noriyuki Taoka et al. · Microelectronic Engineering · 2007 · 105 citations

Electrical Engineering, Engineering, Bias Temperature Instability +3

Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation

Keiji Ikeda, Yoshimi Yamashita, Naoharu Sugiyama et al. · Applied Physics Letters · 2006 · 90 citations

Wide-bandgap Semiconductor, Engineering, Sulfur Segregation +18

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Akira Endoh, Yoshimi Yamashita, Keiji Ikeda et al. · Japanese Journal of Applied Physics · 2004 · 74 citations

High Rf Performance, Wide-bandgap Semiconductor, Electrical Engineering +9

Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai et al. · Thin Solid Films · 2005 · 65 citations

Electrical Engineering, Engineering, Nanoelectronics +4